Vertical GaN MOSFET Power Devices

por Langpoklakpam, Catherine, Liu, An-Chen, Hsiao, Yi-Kai, Lin, Chun-Hsiung, Kuo, Hao-Chung
Publicado 2023

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

por Weng, You-Chen, Hsiao, Ming-Yao, Lin, Chun-Hsiung, Lan, Yu-Pin, Chang, Edward-Yi
Publicado 2023

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

por Lin, Yuan, Kao, Min-Lu, Weng, You-Chen, Dee, Chang-Fu, Chen, Shih-Chen, Kuo, Hao-Chung, Lin, Chun-Hsiung, Chang, Edward-Yi
Publicado 2022

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

por Hong, Kuo-Bin, Peng, Chun-Yen, Lin, Wei-Cheng, Chen, Kuan-Lun, Chen, Shih-Chen, Kuo, Hao-Chung, Chang, Edward Yi, Lin, Chun-Hsiung
Publicado 2023

The Evolution of Manufacturing Technology for GaN Electronic Devices

por Liu, An-Chen, Tu, Po-Tsung, Langpoklakpam, Catherine, Huang, Yu-Wen, Chang, Ya-Ting, Tzou, An-Jye, Hsu, Lung-Hsing, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Publicado 2021

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

por Hsu, Lung-Hsing, Lai, Yung-Yu, Tu, Po-Tsung, Langpoklakpam, Catherine, Chang, Ya-Ting, Huang, Yu-Wen, Lee, Wen-Chung, Tzou, An-Jye, Cheng, Yuh-Jen, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Publicado 2021