Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

por Kuo, Cheng-Hsiang, Wu, Jyh-Ming, Lin, Su-Jien
Publicado 2013

Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640

por Chen, Yi-Yueh, Lin, Su-Jien, Chang, Shou-Yi
Publicado 2022

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

por Kuo, Cheng-Hsiang, Wu, Jyh-Ming, Lin, Su-Jien, Chang, Wen-Chih
Publicado 2013

Effect of Titanium Addition on the Thermal Properties of Diamond/Cu-Ti Composites Fabricated by Pressureless Liquid-Phase Sintering Technique

por Chung, Chih-Yu, Chu, Chao-Hung, Lee, Mu-Tse, Lin, Chun-Ming, Lin, Su-Jien
Publicado 2014

Sn-doped In(2)O(3) nanowires: enhancement of electrical field emission by a selective area growth

por Chang, Wen-Chih, Kuo, Cheng-Hsiang, Juan, Chien-Chang, Lee, Pei-Jung, Chueh, Yu-Lun, Lin, Su-Jien
Publicado 2012

Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

por Huang, Hsin-Wei, Kang, Chen-Fang, Lai, Fang-I, He, Jr-Hau, Lin, Su-Jien, Chueh, Yu-Lun
Publicado 2013

Structural and Thermodynamic Factors of Suppressed Interdiffusion Kinetics in Multi-component High-entropy Materials

por Chang, Shou-Yi, Li, Chen-En, Huang, Yi-Chung, Hsu, Hsun-Feng, Yeh, Jien-Wei, Lin, Su-Jien
Publicado 2014

New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device

por Chen, Yi-Yueh, Lee, Feng-Ming, Lin, Yu-Yu, Lee, Chih-Hsiung, Chen, Wei-Chen, Shu, Che-Kai, Lin, Su-Jien, Chang, Shou-Yi, Lu, Chih-Yuan
Publicado 2022