Variability Improvement of TiO(x)/Al(2)O(3) Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al(2)O(3) Dielectric Material

por Banerjee, Writam, Xu, Xiaoxin, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming
Publicado 2017

A RISC-V Processor with Area-Efficient Memristor-Based In-Memory Computing for Hash Algorithm in Blockchain Applications

por Xue, Xiaoyong, Wang, Chenzedai, Liu, Wenjun, Lv, Hangbing, Wang, Mingyu, Zeng, Xiaoyang
Publicado 2019

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device

por Zhang, Meiyun, Long, Shibing, Li, Yang, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming
Publicado 2016

Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta(2)O(5)/HfO(2-x)/Hf Stack

por Ma, Haili, Feng, Jie, Lv, Hangbing, Gao, Tian, Xu, Xiaoxin, Luo, Qing, Gong, Tiancheng, Yuan, Peng
Publicado 2017

A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory

por Wang, Qiao, Zhang, Donglin, Zhao, Yulin, Liu, Chao, Hu, Qiao, Liu, Xuanzhi, Yang, Jianguo, Lv, Hangbing
Publicado 2021

Thermoelectric Seebeck effect in oxide-based resistive switching memory

por Wang, Ming, Bi, Chong, Li, Ling, Long, Shibing, Liu, Qi, Lv, Hangbing, Lu, Nianduan, Sun, Pengxiao, Liu, Ming
Publicado 2014

Conductance Quantization in Resistive Random Access Memory

por Li, Yang, Long, Shibing, Liu, Yang, Hu, Chen, Teng, Jiao, Liu, Qi, Lv, Hangbing, Suñé, Jordi, Liu, Ming
Publicado 2015

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

por Li, Yu, Zhang, Meiyun, Long, Shibing, Teng, Jiao, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming
Publicado 2017

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

por Lv, Hangbing, Xu, Xiaoxin, Liu, Hongtao, Liu, Ruoyu, Liu, Qi, Banerjee, Writam, Sun, Haitao, Long, Shibing, Li, Ling, Liu, Ming
Publicado 2015

Thermal crosstalk in 3-dimensional RRAM crossbar array

por Sun, Pengxiao, Lu, Nianduan, Li, Ling, Li, Yingtao, Wang, Hong, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Su, Liu, Ming
Publicado 2015

Atomic View of Filament Growth in Electrochemical Memristive Elements

por Lv, Hangbing, Xu, Xiaoxin, Sun, Pengxiao, Liu, Hongtao, Luo, Qing, Liu, Qi, Banerjee, Writam, Sun, Haitao, Long, Shibing, Li, Ling, Liu, Ming
Publicado 2015

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO(2)/Pt Resistive Switching Memory

por Li, Leilei, Liu, Yang, Teng, Jiao, Long, Shibing, Guo, Qixun, Zhang, Meiyun, Wu, Yu, Yu, Guanghua, Liu, Qi, Lv, Hangbing, Liu, Ming
Publicado 2017

Investigation of LRS dependence on the retention of HRS in CBRAM

por Xu, Xiaoxin, Lv, Hangbing, Liu, Hongtao, Luo, Qing, Gong, Tiancheng, Wang, Ming, Wang, Guoming, Zhang, Meiyun, Li, Yang, Liu, Qi, Long, Shibing, Liu, Ming
Publicado 2015

Statistical characteristics of reset switching in Cu/HfO(2)/Pt resistive switching memory

por Zhang, Meiyun, Long, Shibing, Wang, Guoming, Liu, Ruoyu, Xu, Xiaoxin, Li, Yang, Xu, Dinlin, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming
Publicado 2014

Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta(2)O(5)/TaO(x) Bi-Layer Structure

por Yu, Jie, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Dong, Danian, Yuan, Peng, Tai, Lu, Yin, Jiahao, Zhu, Xi, Wu, Xiulong, Lv, Hangbing, Liu, Ming
Publicado 2019

Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

por Zhang, Donglin, Peng, Bo, Zhao, Yulin, Han, Zhongze, Hu, Qiao, Liu, Xuanzhi, Han, Yongkang, Yang, Honghu, Cheng, Jinhui, Ding, Qingting, Jiang, Haijun, Yang, Jianguo, Lv, Hangbing
Publicado 2021

Impact of program/erase operation on the performances of oxide-based resistive switching memory

por Wang, Guoming, Long, Shibing, Yu, Zhaoan, Zhang, Meiyun, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Yan, Xiaobing, Wang, Ming, Xu, Xiaoxin, Liu, Hongtao, Yang, Baohe, Liu, Ming
Publicado 2015

Probabilistic Circuit Implementation Based on P-Bits Using the Intrinsic Random Property of RRAM and P-Bit Multiplexing Strategy

por Liu, Yixuan, Hu, Qiao, Wu, Qiqiao, Liu, Xuanzhi, Zhao, Yulin, Zhang, Donglin, Han, Zhongze, Cheng, Jinhui, Ding, Qingting, Han, Yongkang, Peng, Bo, Jiang, Haijun, Xue, Xiaoyong, Lv, Hangbing, Yang, Jianguo
Publicado 2022

Evolution of the conductive filament system in HfO(2)-based memristors observed by direct atomic-scale imaging

por Zhang, Ying, Mao, Ge-Qi, Zhao, Xiaolong, Li, Yu, Zhang, Meiyun, Wu, Zuheng, Wu, Wei, Sun, Huajun, Guo, Yizhong, Wang, Lihua, Zhang, Xumeng, Liu, Qi, Lv, Hangbing, Xue, Kan-Hao, Xu, Guangwei, Miao, Xiangshui, Long, Shibing, Liu, Ming
Publicado 2021

A highly CMOS compatible hafnia-based ferroelectric diode

por Luo, Qing, Cheng, Yan, Yang, Jianguo, Cao, Rongrong, Ma, Haili, Yang, Yang, Huang, Rong, Wei, Wei, Zheng, Yonghui, Gong, Tiancheng, Yu, Jie, Xu, Xiaoxin, Yuan, Peng, Li, Xiaoyan, Tai, Lu, Yu, Haoran, Shang, Dashan, Liu, Qi, Yu, Bing, Ren, Qiwei, Lv, Hangbing, Liu, Ming
Publicado 2020