Proposal: microscopical studies of structural and electronic properties of semiconductors

por Deicher, M, Keller, R, Magerle, R
Publicado 1990

Creation of Ga$_{As}$ antisites in GaAs by transmutation of radioactive $^{71}$As$_{As}$ to stable $^{71}$Ga$_{As}$

por Magerle, R, Burchard, A, Forkel-Wirth, Doris, Deicher, M
Publicado 1997

Defect recovery of ion-implantd CdTe

por Burchard, A, Magerle, R, Freidinger, J, Jahn, S G, Deicher, M
Publicado 1996

Semiconductors with structurally determined vacancies: PAC studies

por Dietrich, M, Degering, D, Kortus, J, Unterricker, S, Deicher, M, Burchard, A, Magerle, R
Publicado 1999

Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique

por Correia, J G, Marques, J G, Forkel-Wirth, Doris, Burchard, A, Magerle, R, Deicher, M
Publicado 1996

Implantation doping and hydrogen passivation of GaN

por Burchard, A, Deicher, M, Forkel-Wirth, Doris, Haller, E E, Magerle, R, Prospero, A, Stötzler, A
Publicado 1997

Acceptor-hydrogen interaction in InAs

por Burchard, A, Correia, J G, Deicher, M, Forkel-Wirth, Doris, Magerle, R, Prospero, A, Stötzler, A
Publicado 1997

First PAC studies on the hydrogen diffusion in III-V semiconductors

por Burchard, A, Deicher, M, Fedosseev, V, Forkel-Wirth, Doris, Magerle, R, Mishin, V I, Egenter, A, Spengler, R
Publicado 1996

Quadrupole interaction in ternary chalcopyrite semiconductors: experiments and theory

por Dietrich, M, Burchard, A, Degering, D, Deicher, M, Kortus, J, Magerle, R, Möller, A, Samokhvalov, V, Unterricker, S, Vianden, R
Publicado 2000

Annealing of Cd-implanted GaAs: defect removal, lattice site occupation, and electrical activation

por Moriya, N, Brener, I, Kalish, R, Pfeiffer, Wolfgang, Deicher, M, Keller, R, Magerle, R, Recknagel, E, Skudlik, H, Wichert, T, Wolf, H
Publicado 1993

Electric field gradients of acceptor-donor pairs in semiconductors

por Burchard, A, Deicher, M, Fedosseev, V, Forkel-Wirth, Doris, Magerle, R, Mishin, V I, Steiner, D, Stötzler, A, Weissenborn, R, Wichert, T
Publicado 1999

Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy

por Pfeiffer, Wolfgang, Deicher, M, Keller, R, Magerle, R, Pross, P, Skudlik, H, Wichert, T, Wolf, H, Forkel-Wirth, Doris, Moriya, N, Kalish, R
Publicado 1991

Cd-H pairs in GaAs: identification and stability

por Pfeiffer, Wolfgang, Deicher, M, Keller, R, Magerle, R, Recknagel, E, Skudlik, H, Wichert, T, Wolf, H, Forkel-Wirth, Doris, Moriya, N, Kalish, R
Publicado 1991

Interaction of hydrogen with Cd acceptons in GaP and InP

por Forkel-Wirth, Doris, Achtziger, N, Burchard, A, Correia, J G, Deicher, M, Licht, T, Magerle, R, Meier, J, Pfeiffer, Wolfgang, Reislöhner, U, Rüb, M, Witthuhn, W
Publicado 1994

Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy

por Forkel-Wirth, Doris, Achtziger, N, Burchard, A, Correia, J C, Deicher, M, Licht, T, Magerle, R, Marques, J G, Meier, J, Pfeiffer, W, Reislthner, U, Riib, M, Toulemonde, M, Witthuhn, W
Publicado 1995