Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO(2)/Al(2)O(3 )gate stack: study of Ge auto-doping and p-type Zn doping

por Dalapati, Goutam Kumar, Shun Wong, Terence Kin, Li, Yang, Chia, Ching Kean, Das, Anindita, Mahata, Chandreswar, Gao, Han, Chattopadhyay, Sanatan, Kumar, Manippady Krishna, Seng, Hwee Leng, Maiti, Chinmay Kumar, Chi, Dong Zhi
Publicado 2012