Gate Length Variation Effect on Performance of Gate-First Self-Aligned In(0.53)Ga(0.47)As MOSFET

por Mohd Razip Wee, Mohd F., Dehzangi, Arash, Bollaert, Sylvain, Wichmann, Nicolas, Majlis, Burhanuddin Y.
Publicado 2013

Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography

por Dehzangi, Arash, Larki, Farhad, Hutagalung, Sabar D., Goodarz Naseri, Mahmood, Majlis, Burhanuddin Y., Navasery, Manizheh, Hamid, Norihan Abdul, Noor, Mimiwaty Mohd
Publicado 2013