Two yellow luminescence bands in undoped GaN

por Reshchikov, M. A., McNamara, J. D., Helava, H., Usikov, A., Makarov, Yu.
Publicado 2018

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

por Reshchikov, M. A., McNamara, J. D., Toporkov, M., Avrutin, V., Morkoç, H., Usikov, A., Helava, H., Makarov, Yu.
Publicado 2016

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

por Reshchikov, M. A., Vorobiov, M., Andrieiev, O., Ding, K., Izyumskaya, N., Avrutin, V., Usikov, A., Helava, H., Makarov, Yu.
Publicado 2020

Evaluation of the concentration of point defects in GaN

por Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu., Prozheeva, V., Makkonen, I., Tuomisto, F., Leach, J. H., Udwary, K.
Publicado 2017