Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

por Fatahilah, Muhammad Fahlesa, Yu, Feng, Strempel, Klaas, Römer, Friedhard, Maradan, Dario, Meneghini, Matteo, Bakin, Andrey, Hohls, Frank, Schumacher, Hans Werner, Witzigmann, Bernd, Waag, Andreas, Wasisto, Hutomo Suryo
Publicado 2019