Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

por Marian, Damiano, Marin, Enrique G., Perucchini, Marta, Iannaccone, Giuseppe, Fiori, Gianluca
Publicado 2023

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

por Marin, Enrique G., Marian, Damiano, Perucchini, Marta, Fiori, Gianluca, Iannaccone, Giuseppe
Publicado 2020

Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces

por Calogero, Gaetano, Marian, Damiano, Marin, Enrique G., Fiori, Gianluca, Iannaccone, Giuseppe
Publicado 2021

Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

por Li, Xuefei, Shi, Xinhang, Marian, Damiano, Soriano, David, Cusati, Teresa, Iannaccone, Giuseppe, Fiori, Gianluca, Guo, Qi, Zhao, Wenjie, Wu, Yanqing
Publicado 2023