Effects of stoichiometry on the transport properties of crystalline phase-change materials

por Zhang, Wei, Wuttig, Matthias, Mazzarello, Riccardo
Publicado 2015

Electronic and magnetic properties of H-terminated graphene nanoribbons deposited on the topological insulator Sb(2)Te(3)

por Zhang, Wei, Hajiheidari, Farideh, Li, Yan, Mazzarello, Riccardo
Publicado 2016

Disorder Control in Crystalline GeSb(2)Te(4) Using High Pressure

por Xu, Ming, Zhang, Wei, Mazzarello, Riccardo, Wuttig, Matthias
Publicado 2015

Ab Initio Molecular Dynamics: Disorder Control in Crystalline GeSb(2)Te(4) Using High Pressure (Adv. Sci. 8/2015)

por Xu, Ming, Zhang, Wei, Mazzarello, Riccardo, Wuttig, Matthias
Publicado 2015

A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

por Wang, Jiang-Jing, Xu, Ya-Zhi, Mazzarello, Riccardo, Wuttig, Matthias, Zhang, Wei
Publicado 2017

How fragility makes phase-change data storage robust: insights from ab initio simulations

por Zhang, Wei, Ronneberger, Ider, Zalden, Peter, Xu, Ming, Salinga, Martin, Wuttig, Matthias, Mazzarello, Riccardo
Publicado 2014

Structural, electronic and kinetic properties of the phase-change material Ge(2)Sb(2)Te(5) in the liquid state

por Schumacher, Mathias, Weber, Hans, Jóvári, Pál, Tsuchiya, Yoshimi, Youngs, Tristan G. A., Kaban, Ivan, Mazzarello, Riccardo
Publicado 2016

Structural disorder in the high-temperature cubic phase of GeTe

por Xu, Ming, Lei, Zhenyu, Yuan, Junhui, Xue, Kanhao, Guo, Yanrong, Wang, Songyou, Miao, Xiangshui, Mazzarello, Riccardo
Publicado 2018

Spin Glass Behavior in Amorphous Cr(2)Ge(2)Te(6) Phase‐Change Alloy

por Wang, Xiaozhe, Sun, Suyang, Wang, Jiang‐Jing, Li, Shuang, Zhou, Jian, Aktas, Oktay, Xu, Ming, Deringer, Volker L., Mazzarello, Riccardo, Ma, En, Zhang, Wei
Publicado 2023

Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)

por Zhang, Wei, Zhang, Hangming, Sun, Suyang, Wang, Xiaozhe, Lu, Zhewen, Wang, Xudong, Wang, Jiang‐Jing, Jia, Chunlin, Schön, Carl‐Friedrich, Mazzarello, Riccardo, Ma, En, Wuttig, Matthias
Publicado 2023

Metavalent Bonding in Layered Phase‐Change Memory Materials

por Zhang, Wei, Zhang, Hangming, Sun, Suyang, Wang, Xiaozhe, Lu, Zhewen, Wang, Xudong, Wang, Jiang‐Jing, Jia, Chunlin, Schön, Carl‐Friedrich, Mazzarello, Riccardo, Ma, En, Wuttig, Matthias
Publicado 2023

Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

por Bragaglia, Valeria, Arciprete, Fabrizio, Zhang, Wei, Mio, Antonio Massimiliano, Zallo, Eugenio, Perumal, Karthick, Giussani, Alessandro, Cecchi, Stefano, Boschker, Jos Emiel, Riechert, Henning, Privitera, Stefania, Rimini, Emanuele, Mazzarello, Riccardo, Calarco, Raffaella
Publicado 2016

Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

por Bragaglia, Valeria, Arciprete, Fabrizio, Zhang, Wei, Mio, Antonio Massimiliano, Zallo, Eugenio, Perumal, Karthick, Giussani, Alessandro, Cecchi, Stefano, Boschker, Jos Emiel, Riechert, Henning, Privitera, Stefania, Rimini, Emanuele, Mazzarello, Riccardo, Calarco, Raffaella
Publicado 2016

Highly tunable β-relaxation enables the tailoring of crystallization in phase-change materials

por Cheng, Yudong, Yang, Qun, Wang, Jiangjing, Dimitriadis, Theodoros, Schumacher, Mathias, Zhang, Huiru, Müller, Maximilian J., Amini, Narges, Yang, Fan, Schoekel, Alexander, Pries, Julian, Mazzarello, Riccardo, Wuttig, Matthias, Yu, Hai-Bin, Wei, Shuai
Publicado 2022