Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

por Long, Rathnait D., McIntyre, Paul C.
Publicado 2012

Effects of H(2) High-pressure Annealing on HfO(2)/Al(2)O(3)/In(0.53)Ga(0.47)As Capacitors: Chemical Composition and Electrical Characteristics

por Choi, Sungho, An, Youngseo, Lee, Changmin, Song, Jeongkeun, Nguyen, Manh-Cuong, Byun, Young-Chul, Choi, Rino, McIntyre, Paul C., Kim, Hyoungsub
Publicado 2017

Dynamic thermal emission control with InAs-based plasmonic metasurfaces

por Park, Junghyun, Kang, Ju-Hyung, Liu, Xiaoge, Maddox, Scott J., Tang, Kechao, McIntyre, Paul C., Bank, Seth R., Brongersma, Mark L.
Publicado 2018