Phase Modulators Based on High Mobility Ambipolar ReSe(2) Field-Effect Transistors

por Pradhan, Nihar R., Garcia, Carlos, Isenberg, Bridget, Rhodes, Daniel, Feng, Simin, Memaran, Shahriar, Xin, Yan, McCreary, Amber, Walker, Angela R. Hight, Raeliarijaona, Aldo, Terrones, Humberto, Terrones, Mauricio, McGill, Stephen, Balicas, Luis
Publicado 2018

Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

por Shcherbakov, Dmitry, Stepanov, Petr, Memaran, Shahriar, Wang, Yaxian, Xin, Yan, Yang, Jiawei, Wei, Kaya, Baumbach, Ryan, Zheng, Wenkai, Watanabe, Kenji, Taniguchi, Takashi, Bockrath, Marc, Smirnov, Dmitry, Siegrist, Theo, Windl, Wolfgang, Balicas, Luis, Lau, Chun Ning
Publicado 2021

Light sources with bias tunable spectrum based on van der Waals interface transistors

por Henck, Hugo, Mauro, Diego, Domaretskiy, Daniil, Philippi, Marc, Memaran, Shahriar, Zheng, Wenkai, Lu, Zhengguang, Shcherbakov, Dmitry, Lau, Chun Ning, Smirnov, Dmitry, Balicas, Luis, Watanabe, Kenji, Taniguchi, Takashi, Fal’ko, Vladimir I., Gutiérrez-Lezama, Ignacio, Ubrig, Nicolas, Morpurgo, Alberto F.
Publicado 2022