Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

por Lee, Jun-Ho, Choi, Jun-Hyeok, Kang, Woo-Seok, Kim, Dohyung, Min, Byoung-Gue, Kang, Dong Min, Choi, Jung Han, Kim, Hyun-Seok
Publicado 2022

Enhanced Operational Characteristics Attained by Applying HfO(2) as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

por Choi, Jun-Hyeok, Kang, Woo-Seok, Kim, Dohyung, Kim, Ji-Hun, Lee, Jun-Ho, Kim, Kyeong-Yong, Min, Byoung-Gue, Kang, Dong Min, Kim, Hyun-Seok
Publicado 2023