An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

por Kessler, Patrick, Lorenz, Katharina, Miranda, Sérgio MC, Correia, João Guilherme, Johnston, Karl, Vianden, Reiner
Publicado 2014

Cd doping of AlN via ion implantation studied with perturbed angular correlation

por Kessler, Patrick, Lorenz, Katharina, Miranda, Sérgio MC, Simon, R, Correia, João Guilherme, Johnston, Karl, Vianden, Reiner
Publicado 2012