Effect of OH(−) on chemical mechanical polishing of β-Ga(2)O(3) (100) substrate using an alkaline slurry

por Huang, Chuanjin, Mu, Wenxiang, Zhou, Hai, Zhu, Yongwei, Xu, Xiaoming, Jia, Zhitai, Zheng, Lei, Tao, Xutang
Publicado 2018

High-Voltage β-Ga(2)O(3) Schottky Diode with Argon-Implanted Edge Termination

por Gao, Yangyang, Li, Ang, Feng, Qian, Hu, Zhuangzhuang, Feng, Zhaoqing, Zhang, Ke, Lu, Xiaoli, Zhang, Chunfu, Zhou, Hong, Mu, Wenxiang, Jia, Zhitai, Zhang, Jincheng, Hao, Yue
Publicado 2019