Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

por Sakic, Agata, Scholtes, Tom L. M., de Boer, Wiebe, Golshani, Negin, Derakhshandeh, Jaber, Nanver, Lis K.
Publicado 2011

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

por Hrauda, Nina, Zhang, Jianjun, Wintersberger, Eugen, Etzelstorfer, Tanja, Mandl, Bernhard, Stangl, Julian, Carbone, Dina, Holý, Vaclav, Jovanović, Vladimir, Biasotto, Cleber, Nanver, Lis K., Moers, Jürgen, Grützmacher, Detlev, Bauer, Günther
Publicado 2011