Bistability of the BiOi complex and its implications on evaluating the “acceptor removal” process in p-type silicon

por Besleaga, C., Kuncser, A., Nitescu, A., Kramberger, G., Moll, M., Pintilie, I.
Publicado 2021

The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes

por Liao, C, Fretwurst, E, Garutti, E, Schwandt, J, Moll, M, Himmerlich, A, Gurimskaya, Y, Pintilie, I, Nitescu, A, Li, Z, Makarenko, L
Publicado 2022