Measurements of neutron-induced effects in silicon detectors and MOS capacitors

por Glaser, M, Lemeilleur, F, Occelli, E
Publicado 1991

Neutron-induced radiation damage in silicon detectors

por Lemeilleur, F, Glaser, M, Heijne, Erik H M, Jarron, Pierre, Occelli, E
Publicado 1991

Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors

por Lemeilleur, F, Glaser, M, Heijne, Erik H M, Jarron, Pierre, Occelli, E, Rioux, J
Publicado 1992

Neutron irradiation of silicon diodes at temperatures of + 20$^0$C and - 20$^0$C

por Anghinolfi, Francis, Bardos, R A, Bates, S, Bonino, R, Clark, A G, Claussen, N, Fretwurst, E, Glaser, M, Gorfine, G W, Gössling, C, Heijne, Erik H M, Jarron, Pierre, Klingenberg, R, Lemeilleur, F, Lindström, G, Moorhead, G F, Munday, D J, Occelli, E, Pagel, H, Papendick, B, Parker, M A, Pollmann, D, Poppleton, Alan, Rolf, A, Scampoli, P, Schulz, T, Taylor, G, Tovey, Stuart N, Weidberg, A R, Wu, X, Wunstorf, R
Publicado 1993

The design and function of a radiation tolerant silicon tracker for an LHC experiment

por Bates, S, Anghinolfi, Francis, Aspell, P, Bardos, R A, Bonino, R, Campbell, D, Chilingarov, A G, Clark, A G, Claussen, N, Couyoumtzelis, C, Fretwurst, E, Gildemeister, O, Glaser, M, Gorfine, G W, Gössling, C, Hawkings, R, Heijne, Erik H M, Jarron, Pierre, Lemeilleur, F, Leroy, C, Lindström, G, Lubrano, P, Moorhead, G F, Munday, D J, Murray, P, Nawrath, G, Occelli, E, Pagel, H, Papendick, B, Parker, M A, Pilath, S, Poppleton, Alan, Reichold, A, Rioux, J, Rolf, A, Rouger, M, Roy, P, Santiard, Jean-Claude, Scampoli, P, Schulz, T, Seller, P, Spiwoks, R, Taylor, G, Teiger, J, Tsesmelis, E, Tovey, Stuart N, Verweij, H, Weidberg, A R, Weisse, T, Wu, X, Wunstorf, R
Publicado 1993