An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices

por Alhasani, Reem, Yabe, Taichi, Iyama, Yutaro, Oi, Nobutaka, Imanishi, Shoichiro, Nguyen, Quang Ngoc, Kawarada, Hiroshi
Publicado 2022

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

por Oi, Nobutaka, Inaba, Masafumi, Okubo, Satoshi, Tsuyuzaki, Ikuto, Kageura, Taisuke, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi
Publicado 2018

Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

por Falina, Shaili, Kawai, Sora, Oi, Nobutaka, Yamano, Hayate, Kageura, Taisuke, Suaebah, Evi, Inaba, Masafumi, Shintani, Yukihiro, Syamsul, Mohd, Kawarada, Hiroshi
Publicado 2018