Remarkable Reduction in I(G) with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al(2)O(3)/SiO(2) Stack Layer AlGaN/GaN MOS-HEMT

por Mazumder, Soumen, Pal, Parthasarathi, Lee, Kuan-Wei, Wang, Yeong-Her
Publicado 2022

High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO(2) Thin Film with Non-Identical Pulse Waveforms

por Lee, Ke-Jing, Weng, Yu-Chuan, Wang, Li-Wen, Lin, Hsin-Ni, Pal, Parthasarathi, Chu, Sheng-Yuan, Lu, Darsen, Wang, Yeong-Her
Publicado 2022