Copper pillar and memory characteristics using Al(2)O(3) switching material for 3D architecture

por Maikap, Siddheswar, Panja, Rajeswar, Jana, Debanjan
Publicado 2014

Impact of device size and thickness of Al(2)O(3) film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

por Panja, Rajeswar, Roy, Sourav, Jana, Debanjan, Maikap, Siddheswar
Publicado 2014

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

por Jana, Debanjan, Roy, Sourav, Panja, Rajeswar, Dutta, Mrinmoy, Rahaman, Sheikh Ziaur, Mahapatra, Rajat, Maikap, Siddheswar
Publicado 2015

Understanding of multi-level resistive switching mechanism in GeO(x) through redox reaction in H(2)O(2)/sarcosine prostate cancer biomarker detection

por Samanta, Subhranu, Rahaman, Sheikh Ziaur, Roy, Anisha, Jana, Surajit, Chakrabarti, Somsubhra, Panja, Rajeswar, Roy, Sourav, Dutta, Mrinmoy, Ginnaram, Sreekanth, Prakash, Amit, Maikap, Siddheswar, Cheng, Hsin-Ming, Tsai, Ling-Na, Qiu, Jian-Tai, Ray, Samit K.
Publicado 2017