Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces

por Ceponis, Tomas, Pavlov, Jevgenij, Kadys, Arunas, Vaitkevicius, Augustas, Gaubas, Eugenijus
Publicado 2023

Simulations of Operation Dynamics of Different Type GaN Particle Sensors

por Gaubas, Eugenijus, Ceponis, Tomas, Kalesinskas, Vidas, Pavlov, Jevgenij, Vysniauskas, Juozas
Publicado 2015

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si(1−x)Ge(x) Alloys

por Pavlov, Jevgenij, Ceponis, Tomas, Pukas, Kornelijus, Makarenko, Leonid, Gaubas, Eugenijus
Publicado 2022

Study of Charge Carrier Transport in GaN Sensors

por Gaubas, Eugenijus, Ceponis, Tomas, Kuokstis, Edmundas, Meskauskaite, Dovile, Pavlov, Jevgenij, Reklaitis, Ignas
Publicado 2016

Study of Radiation-Induced Defects in p-Type Si(1−x)Ge(x) Diodes before and after Annealing

por Ceponis, Tomas, Lastovskii, Stanislau, Makarenko, Leonid, Pavlov, Jevgenij, Pukas, Kornelijus, Gaubas, Eugenijus
Publicado 2020

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

por Ceponis, Tomas, Deveikis, Laimonas, Lastovskii, Stanislau, Makarenko, Leonid, Pavlov, Jevgenij, Pukas, Kornelijus, Rumbauskas, Vytautas, Gaubas, Eugenijus
Publicado 2020

Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation

por Ceponis, Tomas, Badokas, Kazimieras, Deveikis, Laimonas, Pavlov, Jevgenij, Rumbauskas, Vytautas, Kovalevskij, Vitalij, Stanionyte, Sandra, Tamulaitis, Gintautas, Gaubas, Eugenijus
Publicado 2019

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

por Makarenko, Leonid F, Lastovski, Stanislav B, Yakushevich, Hanna S, Gaubas, Eugenijus, Pavlov, Jevgenij, Kozlovski, Vitali V, Moll, Michael, Pintilie, Ioana
Publicado 2019