Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

por Schiavon, Dario, Litwin-Staszewska, Elżbieta, Jakieła, Rafał, Grzanka, Szymon, Perlin, Piotr
Publicado 2021

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes

por Levchenko, Iryna, Kryvyi, Serhii, Kamińska, Eliana, Grzanka, Szymon, Grzanka, Ewa, Marona, Łucja, Perlin, Piotr
Publicado 2023

Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells

por Marona, Lucja, Schiavon, Dario, Baranowski, Michał, Kudrawiec, Robert, Gorczyca, Iza, Kafar, Anna, Perlin, Piotr
Publicado 2020

Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

por Schiavon, Dario, Mroczyński, Robert, Kafar, Anna, Kamler, Grzegorz, Levchenko, Iryna, Najda, Stephen, Perlin, Piotr
Publicado 2021

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

por Gibasiewicz, Krzysztof, Kafar, Anna, Schiavon, Dario, Saba, Kiran, Marona, Łucja, Kamińska, Eliana, Perlin, Piotr
Publicado 2023

Role of dislocations in nitride laser diodes with different indium content

por Bojarska-Cieślińska, Agata, Marona, Łucja, Smalc-Koziorowska, Julita, Grzanka, Szymon, Weyher, Jan, Schiavon, Dario, Perlin, Piotr
Publicado 2021

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

por Saba, Kiran, Kafar, Anna, Kacperski, Jacek, Gibasiewicz, Krzysztof, Schiavon, Dario, Oto, Takao, Grzanka, Szymon, Perlin, Piotr
Publicado 2023