Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy

por Pintilie, I, Tivarus, C, Botila, T, Petre, D
Publicado 2000

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

por Fretwurst, E., Lindstrom, G., Stahl, J., Pintilie, I.
Publicado 2002

Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

por Stahl, J, Fretwurst, E, Lindström, G, Pintilie, I
Publicado 2003

Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”

por Pintilie, I, Fretwurst, E, Lindström, G, Stahl, J
Publicado 2003

Radiation hardness of silicon—a challenge for defect engineering

por Stahl, J, Fretwurst, E, Lindstroem, G, Pintilie, I
Publicado 2003

Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents

por Pintilie, I, Petre, D, Tivarus, C, Petris, M, Botila, T
Publicado 2000

Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes

por Makarenko, L F, Lastovskii, S B, Yakushevich, H S, Moll, M, Pintilie, I
Publicado 2014

Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

por Makarenko, L F, Lastovskii, S B, Yakushevich, H S, Moll, M, Pintilie, I
Publicado 2018

Bistability of the BiOi complex and its implications on evaluating the “acceptor removal” process in p-type silicon

por Besleaga, C., Kuncser, A., Nitescu, A., Kramberger, G., Moll, M., Pintilie, I.
Publicado 2021

Characterization of oxygen dimer-enriched silicon detectors

por Boisvert, V, Lindström, J L, Moll, M, Murin, L I, Pintilie, I
Publicado 2005

Second-order generation of point defects in highly irradiated float zone silicon—annealing studies

por Pintilie, I, Fretwurst, E, Kramberger, G, Lindstroem, G, Li, Z, Stahl, J
Publicado 2003

Some annealing effects in proton irradiated silicon detectors

por Pintilie, I, Petris, M, Tivarus, C, Moll, M, Fretwurst, E, Lindstroem, G
Publicado 2000

Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon

por Makarenko, L F, Korshunov, F P, Lastovskii, S B, Murin, L I, Moll, M, Pintilie, I
Publicado 2014

Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures

por Makarenko, L F, Lastovskii, S B, Korshunov, F P, Moll, M, Pintilie, I, Abrosimov, N V
Publicado 2015

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

por Liao, C., Fretwurst, E., Garutti, E., Schwandt, J., Pintilie, I., Himmerlich, A., Moll, M., Gurimskaya, Y., Li, Z.
Publicado 2023

Superior radiation tolerance of thin epitaxial silicon detectors

por Kramberger, G, Contardo, D, Fretwurst, E, Honniger, F, Lindström, G, Pintilie, I, Röder, R, Schramm, A, Stahl, J
Publicado 2003

The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes

por Liao, C, Fretwurst, E, Garutti, E, Schwandt, J, Moll, M, Himmerlich, A, Gurimskaya, Y, Pintilie, I, Nitescu, A, Li, Z, Makarenko, L
Publicado 2022

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

por Liao, C., Fretwurst, E., Garutti, E., Schwandt, J., Makarenko, L., Pintilie, I., Filip, Lucian D., Himmerlich, A., Moll, M., Gurimskaya, Y., Li, Z.
Publicado 2023

Carbon-based sprayed electrodes for pyroelectric applications

por Chirila, C., Botea, M., Iuga, A., Tomulescu, A. G., Balescu, L., Galca, A. C., Boni, A. G., Leonat, L., Pintilie, I., Pintilie, L.
Publicado 2019

2nd RD48 Status Report: R & D on silicon for future experiments

por Lindström, G, Watts, S, Augelli, V, Angarano, M M, Creanza, D, De Palma, M, Schiavulli, L, Weber, E, Li, Z, Dezillie, B, Vasilescu, A, Botila, T, Petre, D, Pintilie, I, Albergo, S, Boemi, D, Potenza, R, Tricomi, A, Casse, G L, Glaser, M, Leroy, C, Riedler, P, Roe, S, Ruzin, A, Weilhammer, Peter, Zankel, K, Fanourakis, G K, Loukas, D, Markou, A, Siotis, I, Tzamarias, S, Vayaki, Anna, Wunstorf, R, Hügging, F G, Kwan, S, Anderson, D, Bruzzi, Mara, Biggeri, U, Borchi, E, Catacchini, E, Focardi, E, Parrini, G, Clauws, P, Smith, K, Bates, R, Manolopoulos, S, O'Shea, V, Pickford, A, Raine, C, Feick, H, Fretwurst, E, Moll, Michael, de Boer, Wim, Grigoriev, G V, Heising, S, Knoblauch, D, Litovchenko, P G, Sloan, Terence, Beatty, L, Brodbeck, T J, Chilingarov, A G, Hughes, G, Ratoff, P N, Jones, B K, McGarry, S, McPherson, M, Allport, P P, Hanlon, M, Holmes-Siedle, A G, Ahmed, M, Solanky, M, Hall, G, MacEvoy, B C, Davies, G, Cindro, V, Mikuz, M, Ottaviani, G, Lutz, Gerhard, Richter, R H, Da Vià, C, Bisello, D, Bacchetta, N, Giraldo, A, Bilei, G M, Bartalini, P, Ciampolini, P, Passeri, D, Santocchia, A, Tonelli, G, Dell'Orso, R, Messineo, A, Verdini, P G, Wheadon, R, Wilhelm, I, Sopko, B, Pospísil, S, Vrba, V, Sícho, P, Swenson, B C, Verbitskaya, E, Eremin, V V, Gabathuler, K, Horisberger, R P, Luczynski, Z, Nossarzhevska, E, Zabierowski, P, Wegrzecki, M, Slysz, W, Lemeilleur, F
Publicado 1998