The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO(2)/FTO Memory Device

por Yu, Zhiqiang, Han, Xu, Xu, Jiamin, Chen, Cheng, Qu, Xinru, Liu, Baosheng, Sun, Zijun, Sun, Tangyou
Publicado 2023

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

por Yu, Zhiqiang, Jia, Jinhao, Qu, Xinru, Wang, Qingcheng, Kang, Wenbo, Liu, Baosheng, Xiao, Qingquan, Gao, Tinghong, Xie, Quan
Publicado 2023