Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

por Qu, Yongfeng, Deng, Ningkang, Yuan, Yuan, Hu, Wenbo, Liu, Hongxia, Wu, Shengli, Wang, Hongxing
Publicado 2022

Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding

por Yang, Song, Deng, Ningkang, Qu, Yongfeng, Wang, Kang, Yuan, Yuan, Hu, Wenbo, Wu, Shengli, Wang, Hongxing
Publicado 2022