Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

por Radamson, Henry, Thylen, Lars
Publicado 2014

Special Issue: Silicon Nanodevices

por Radamson, Henry H., Wang, Guilei
Publicado 2022

CMOS: past, present and future

por Radamson, Henry, Simoen, Eddy, Luo, Jun, Zhao, Chao
Publicado 2018

Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design

por Kolahdouz, Mohammadreza, Xu, Buqing, Nasiri, Aryanaz Faghih, Fathollahzadeh, Maryam, Manian, Mahmoud, Aghababa, Hossein, Wu, Yuanyuan, Radamson, Henry H.
Publicado 2022

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

por Li, Chen, Lin, Hongxiao, Li, Junjie, Yin, Xiaogen, Zhang, Yongkui, Kong, Zhenzhen, Wang, Guilei, Zhu, Huilong, Radamson, Henry H.
Publicado 2020

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

por Du, Yong, Xu, Buqing, Wang, Guilei, Miao, Yuanhao, Li, Ben, Kong, Zhenzhen, Dong, Yan, Wang, Wenwu, Radamson, Henry H.
Publicado 2022

Nanometer-Thick ZnO/SnO(2) Heterostructures Grown on Alumina for H(2)S Sensing

por Akbari-Saatlu, Mehdi, Procek, Marcin, Mattsson, Claes, Thungström, Göran, Törndahl, Tobias, Li, Ben, Su, Jiale, Xiong, Wenjuan, Radamson, Henry H.
Publicado 2022

Silicon Nanowires for Gas Sensing: A Review

por Akbari-Saatlu, Mehdi, Procek, Marcin, Mattsson, Claes, Thungström, Göran, Nilsson, Hans-Erik, Xiong, Wenjuan, Xu, Buqing, Li, You, Radamson, Henry H.
Publicado 2020

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

por Xu, Buqing, Wang, Guilei, Du, Yong, Miao, Yuanhao, Wu, Yuanyuan, Kong, Zhenzhen, Su, Jiale, Li, Ben, Yu, Jiahan, Radamson, Henry H.
Publicado 2022

pMOSFETs Featuring ALD W Filling Metal Using SiH(4) and B(2)H(6) Precursors in 22 nm Node CMOS Technology

por Wang, Guilei, Luo, Jun, Liu, Jinbiao, Yang, Tao, Xu, Yefeng, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Zhao, Chao, Ye, Tianchun, Radamson, Henry H.
Publicado 2017

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

por Xu, Buqing, Wang, Guilei, Du, Yong, Miao, Yuanhao, Li, Ben, Zhao, Xuewei, Lin, Hongxiao, Yu, Jiahan, Su, Jiale, Dong, Yan, Ye, Tianchun, Radamson, Henry H.
Publicado 2022

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

por Du, Yong, Kong, Zhenzhen, Toprak, Muhammet S., Wang, Guilei, Miao, Yuanhao, Xu, Buqing, Yu, Jiahan, Li, Ben, Lin, Hongxiao, Han, Jianghao, Dong, Yan, Wang, Wenwu, Radamson, Henry H.
Publicado 2021

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

por Zhao, Xuewei, Wang, Guilei, Lin, Hongxiao, Du, Yong, Luo, Xue, Kong, Zhenzhen, Su, Jiale, Li, Junjie, Xiong, Wenjuan, Miao, Yuanhao, Li, Haiou, Guo, Guoping, Radamson, Henry H.
Publicado 2021

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

por Miao, Yuanhao, Wang, Guilei, Kong, Zhenzhen, Xu, Buqing, Zhao, Xuewei, Luo, Xue, Lin, Hongxiao, Dong, Yan, Lu, Bin, Dong, Linpeng, Zhou, Jiuren, Liu, Jinbiao, Radamson, Henry H.
Publicado 2021

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

por Xu, Buqing, Du, Yong, Wang, Guilei, Xiong, Wenjuan, Kong, Zhenzhen, Zhao, Xuewei, Miao, Yuanhao, Wang, Yijie, Lin, Hongxiao, Su, Jiale, Li, Ben, Wu, Yuanyuan, Radamson, Henry H.
Publicado 2022

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

por Wang, Guilei, Luo, Jun, Qin, Changliang, Liang, Renrong, Xu, Yefeng, Liu, Jinbiao, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Xu, Jun, Zhao, Chao, Radamson, Henry H., Ye, Tianchun
Publicado 2017

Investigation on Ge(0.8)Si(0.2)-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

por Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Li, Junjie, Wang, Guilei, Du, Anyan, Kong, Zhenzhen, Wang, Qi, Lu, Shunshun, Li, Chen, Li, Yangyang, Huang, Weixing, Radamson, Henry H.
Publicado 2021

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

por Miao, Yuanhao, Lin, Hongxiao, Li, Ben, Dong, Tianyu, He, Chuangqi, Du, Junhao, Zhao, Xuewei, Zhou, Ziwei, Su, Jiale, Wang, He, Dong, Yan, Lu, Bin, Dong, Linpeng, Radamson, Henry H.
Publicado 2023

Strained Si(0.2)Ge(0.8)/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

por Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Wang, Guilei, Li, Junjie, Du, Anyan, Kong, Zhenzhen, Yin, Xiaogen, Li, Chen, Zhao, Liheng, Li, Yangyang, Jia, Kunpeng, Li, Ben, Radamson, Henry H.
Publicado 2020

Strain Modulation of Selectively and/or Globally Grown Ge Layers

por Du, Yong, Wang, Guilei, Miao, Yuanhao, Xu, Buqing, Li, Ben, Kong, Zhenzhen, Yu, Jiahan, Zhao, Xuewei, Lin, Hongxiao, Su, Jiale, Han, Jianghao, Liu, Jinbiao, Dong, Yan, Wang, Wenwu, Radamson, Henry H.
Publicado 2021