Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM with Self-Rectifying Switch Characteristics

por Lin, Yu-De, Chen, Pang-Shiu, Lee, Heng-Yuan, Chen, Yu-Sheng, Rahaman, Sk. Ziaur, Tsai, Kan-Hsueh, Hsu, Chien-Hua, Chen, Wei-Su, Wang, Pei-Hua, King, Ya-Chin, Lin, Chrong Jung
Publicado 2017