Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

por Choi, Sungju, Kim, Jae-Young, Kang, Hara, Ko, Daehyun, Rhee, Jihyun, Choi, Sung-Jin, Kim, Dong Myong, Kim, Dae Hwan
Publicado 2019