Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

por Steiner, Johannes, Roder, Melissa, Nguyen, Binh Duong, Sandfeld, Stefan, Danilewsky, Andreas, Wellmann, Peter J.
Publicado 2019

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

por Roder, Melissa, Steiner, Johannes, Wellmann, Peter, Kabukcuoglu, Merve, Hamann, Elias, Haaga, Simon, Hänschke, Daniel, Danilewsky, Andreas
Publicado 2023

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals

por Gradwohl, Kevin-P., Danilewsky, Andreas N., Roder, Melissa, Schmidbauer, Martin, Janicskó-Csáthy, József, Gybin, Alexander, Abrosimov, Nikolay, Sumathi, R. Radhakrishnan
Publicado 2020