Implementing the Reactor Geometry in the Modeling of Chemical Bath Deposition of ZnO Nanowires

por Lausecker, Clément, Salem, Bassem, Baillin, Xavier, Consonni, Vincent
Publicado 2022

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

por Al-Saigh, Reem, Baira, Mourad, Salem, Bassem, Ilahi, Bouraoui
Publicado 2018

Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots

por Baira, Mourad, Salem, Bassem, Madhar, Niyaz Ahmad, Ilahi, Bouraoui
Publicado 2019

Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field

por Baira, Mourad, Salem, Bassem, Ahamad Madhar, Niyaz, Ilahi, Bouraoui
Publicado 2019

Functional Devices from Bottom-Up Silicon Nanowires: A Review

por Arjmand, Tabassom, Legallais, Maxime, Nguyen, Thi Thu Thuy, Serre, Pauline, Vallejo-Perez, Monica, Morisot, Fanny, Salem, Bassem, Ternon, Céline
Publicado 2022

Reversible Al Propagation in Si(x)Ge(1–x) Nanowires: Implications for Electrical Contact Formation

por Luong, Minh Anh, Robin, Eric, Pauc, Nicolas, Gentile, Pascal, Baron, Thierry, Salem, Bassem, Sistani, Masiar, Lugstein, Alois, Spies, Maria, Fernandez, Bruno, den Hertog, Martien
Publicado 2020

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

por Potié, Alexis, Baron, Thierry, Dhalluin, Florian, Rosaz, Guillaume, Salem, Bassem, Latu-Romain, Laurence, Kogelschatz, Martin, Gentile, Pascal, Oehler, Fabrice, Montès, Laurent, Kreisel, Jens, Roussel, Hervé
Publicado 2011

Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

por Vallejo-Perez, Monica, Ternon, Céline, Spinelli, Nicolas, Morisot, Fanny, Theodorou, Christoforos, Jayakumar, Ganesh, Hellström, Per-Erik, Mouis, Mireille, Rapenne, Laetitia, Mescot, Xavier, Salem, Bassem, Stambouli, Valérie
Publicado 2020

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

por Abouzaid, Oumaima, Mehdi, Hussein, Martin, Mickael, Moeyaert, Jérémy, Salem, Bassem, David, Sylvain, Souifi, Abdelkader, Chauvin, Nicolas, Hartmann, Jean-Michel, Ilahi, Bouraoui, Morris, Denis, Ahaitouf, Ali, Ahaitouf, Abdelaziz, Baron, Thierry
Publicado 2020