Quantum simulation of the Hubbard model with dopant atoms in silicon

por Salfi, J., Mol, J. A., Rahman, R., Klimeck, G., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S.
Publicado 2016

Valley interference and spin exchange at the atomic scale in silicon

por Voisin, B., Bocquel, J., Tankasala, A., Usman, M., Salfi, J., Rahman, R., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S.
Publicado 2020