Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

por Cheng, Po-Hsien, Wang, Chun-Yuan, Chang, Teng-Jan, Shen, Tsung-Han, Cai, Yu-Syuan, Chen, Miin-Jang
Publicado 2017

AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

por Kao, Wei-Chung, Lee, Wei-Hao, Yi, Sheng-Han, Shen, Tsung-Han, Lin, Hsin-Chih, Chen, Miin-Jang
Publicado 2019