Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface

por Nishio, Kengo, Yayama, Tomoe, Miyazaki, Takehide, Taoka, Noriyuki, Shimizu, Mitsuaki
Publicado 2018

Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods

por Nguyen, Huu Trung, Yamada, Hisashi, Yamada, Toshikazu, Takahashi, Tokio, Shimizu, Mitsuaki
Publicado 2020