Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

por Shin, Ki-Yong, Shin, Ju-Won, Amir, Walid, Chakraborty, Surajit, Shim, Jae-Phil, Lee, Sang-Tae, Jang, Hyunchul, Shin, Chan-Soo, Kwon, Hyuk-Min, Kim, Tae-Woo
Publicado 2023

A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors

por Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Kim, Jae-Moo, Cho, Chu-Young, Park, Kyung-Ho, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae-Woo
Publicado 2021

Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors

por Amir, Walid, Shin, Ju‑Won, Shin, Ki‑Yong, Kim, Jae‑Moo, Cho, Chu‑Young, Park, Kyung‑Ho, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae‑Woo
Publicado 2021

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

por Chakraborty, Surajit, Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Cho, Chu-Young, Kim, Jae-Moo, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kwon, Hyuk-Min, Kim, Dae-Hyun, Kim, Tae-Woo
Publicado 2022