Band transport across a chain of dopant sites in silicon over micron distances and high temperatures

por Prati, Enrico, Kumagai, Kuninori, Hori, Masahiro, Shinada, Takahiro
Publicado 2016

GeV(n) complexes for silicon-based room-temperature single-atom nanoelectronics

por Achilli, Simona, Manini, Nicola, Onida, Giovanni, Shinada, Takahiro, Tanii, Takashi, Prati, Enrico
Publicado 2018

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

por Celebrano, Michele, Ghirardini, Lavinia, Finazzi, Marco, Ferrari, Giorgio, Chiba, Yuki, Abdelghafar, Ayman, Yano, Maasa, Shinada, Takahiro, Tanii, Takashi, Prati, Enrico
Publicado 2019

Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond

por Liu, Yan, Chen, Gengxu, Rong, Youying, McGuinness, Liam Paul, Jelezko, Fedor, Tamura, Syuto, Tanii, Takashi, Teraji, Tokuyuki, Onoda, Shinobu, Ohshima, Takeshi, Isoya, Junichi, Shinada, Takahiro, Wu, E, Zeng, Heping
Publicado 2015