7th International Workshop on Room-temperature Semiconductor X- and $\gamma$-ray Detectors and Associated Electronics

por Dusi, W, Perillo, E, Siffert, P
Publicado 1992

Fast neutron monitoring with silicon detectors

por Jung, M, Teissier, C, Siffert, P, Raffnsoe, R C
Publicado 1994

TCS defect level in silicon produced by irradiation with muons of GeV-energy

por Heijne, Erik H M, Müller, J C, Siffert, P
Publicado 1975

TSC defect level in silicon produced by irradiation with muons of GeV-energy

por Heijne, Erik H M, Müller, J C, Siffert, P
Publicado 1976

Neuroimmunomodulation in the Gut: Focus on Inflammatory Bowel Disease

por Bernardazzi, Claudio, Pêgo, Beatriz, de Souza, Heitor Siffert P.
Publicado 2016

International Workshop on Room Temperature Semiconductor X- and $\gamma$-Ray Detectors

por Cuzin, M, James, R B, Manfredi, P F, Siffert, P
Publicado 1996

Charge multiplication in silicon radiation detectors under dense irradiation

por Heijne, Erik H M, Belcarz, E, Müller, J C, Siffert, P
Publicado 1977

Lettre d'intention concernant l'étude de la diffusion élastique $p-^{3}He$ et l'étude de la dissociation cohérente de $^{3}He$ avec des protons de 600 MeV

por Combe, J, Dahl-Jensen, Erik, Gardès, J, Meritet, L, Querrou, M, Siffert, P
Publicado 1968

Lettre d'intention concernant l'étude de la diffusion élastique $p-^{3}He$ et l'étude de la dissociation cohérente de $^{3}He$ avec des protons de 600 MeV

por Combe, J, Dahl-Jensen, Erik, Gardès, J, Meritet, L, Querrou, M, Siffert, P, Miehe, M
Publicado 1968

Proposition d'expérience concernant l'étude de la diffusion élastique $p-He^{3}$ à 600 MeV

por Combe, J, Dhal-Jensen, E, Gardès, J, Meritet, L, Querrou, M, Siffert, P, Miehe, M
Publicado 1968

Large departures from Landau distributions for high-energy particles traversing thin Si and Ge targets

por Bak, J F, Burenkov, A N, Petersen, J B B, Uggerhøj, Erik, Møller, S P, Siffert, P
Publicado 1987

Proposition d'experience sur l'etude comparee des sections efficaces differentielles de diffusion p- $\overline{3} He$ et p- $\overline{3} H$ a 600 MeV a l'aide de detecteurs semic...

por Brossard, M, Cordaillat, A, Combe, J, Faïn, J, Gardès, J, Méritet, L, Querrou, M, Riss, D, Siffert, P
Publicado 1969

Detailed investigation of the channelling phenomena involved in bending of high-energy beams by means of crystals

por Bak, J F, Jensen, P R, Madsbøll, H, Møller, S P, Schiøtt, Hans E, Uggerhøj, Erik, Grob, J J, Siffert, P
Publicado 1984

Detailed investigations of shower formation in Ge and W crystals traversed by 40 to 287 GeV/c electrons

por Medenwaldt, R, Møller, S P, Tang-Petersen, S, Uggerhøj, Erik, Elsener, K, Hage-Ali, M, Siffert, P, Stoquert, J P, Maier, K
Publicado 1989

High efficiency beam deflection by planar channeling in bent silicon crystals

por Elsener, K, Clément, M, Doble, Niels T, Gatignon, L, Grafström, P, Møller, S P, Uggerhøj, Erik, Worm, T, Hage-Ali, M, Siffert, P
Publicado 1993

Observation of high deflection efficiency and narrow energy loss distributions for 450 GeV protons channeled in a bent silicon crystal

por Møller, S P, Worm, T, Clément, M, Doble, Niels T, Elsener, K, Gatignon, L, Grafström, P, Uggerhøj, Erik, Hage-Ali, M, Siffert, P
Publicado 1993

New experimental investigations of the density effect on inner-shell excitation and energy loss

por Bak, J F, Meyer, F E, Petersen, J B B, Uggerhøj, Erik, Østergaard, K, Møller, S P, Sørensen, A H, Siffert, P
Publicado 1983

Coherent bremsstrahlung and channeling radiation from 40-GeV and 150-GeV electrons and positrons traversing Si and diamond single crystals near planar directions

por Medenwaldt, R, Møller, S P, Sørensen, A H, Uggerhøj, Erik, Elsener, K, Hage-Ali, M, Siffert, P, Stoquert, J P, Sona, P
Publicado 1991

Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

por Medenwaldt, R, Møller, S P, Tang-Petersen, S, Uggerhøj, Erik, Elsener, K, Hage-Ali, M, Siffert, P, Stoquert, J P, Sona, P, Maier, K
Publicado 1990

High efficiency bending of 450 GeV protons using channeling

por Møller, S P, Uggerhøj, Erik, Atherton, Henry W, Clément, M, Doble, Niels T, Elsener, K, Gatignon, L, Grafström, P, Hage-Ali, M, Siffert, P
Publicado 1991