Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

por Sombrio, Guilherme, Oliveira, Emerson, Strassner, Johannes, Richter, Johannes, Doering, Christoph, Fouckhardt, Henning
Publicado 2021