Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

por Huang, Yifei, Wang, Ying, Kuang, Xiaofei, Wang, Wenju, Tang, Jianxiang, Sun, Youlei
Publicado 2018

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

por Sun, Youlei, Wang, Ying, Tang, Jianxiang, Wang, Wenju, Huang, Yifei, Kuang, Xiaofei
Publicado 2019