Semiconductor devices: physics and technology

por Sze, Simon, Lee, Ming-Kwei
Publicado 2012

Overview of emerging nonvolatile memory technologies

por Meena, Jagan Singh, Sze, Simon Min, Chand, Umesh, Tseng, Tseung-Yuen
Publicado 2014

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

por Gan, Kai-Jhih, Liu, Po-Tsun, Chien, Ta-Chun, Ruan, Dun-Bao, Sze, Simon M.
Publicado 2019

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

por Hsu, Chih-Chieh, Liu, Po-Tsun, Gan, Kai-Jhih, Ruan, Dun-Bao, Sze, Simon M.
Publicado 2021

Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

por Liu, Po Tsun, Ruan, Dun Bao, Yeh, Xiu Yun, Chiu, Yu Chuan, Zheng, Guang Ting, Sze, Simon M.
Publicado 2018

Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment

por Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Publicado 2016

Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode

por Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Publicado 2016

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

por Ruan, Dun-Bao, Liu, Po-Tsun, Chiu, Yu-Chuan, Kuo, Po-Yi, Yu, Min-Chin, Gan, Kai-jhih, Chien, Ta-Chun, Sze, Simon M.
Publicado 2018

Conduction Mechanism and Improved Endurance in HfO(2)-Based RRAM with Nitridation Treatment

por Yuan, Fang-Yuan, Deng, Ning, Shih, Chih-Cheng, Tseng, Yi-Ting, Chang, Ting-Chang, Chang, Kuan-Chang, Wang, Ming-Hui, Chen, Wen-Chung, Zheng, Hao-Xuan, Wu, Huaqiang, Qian, He, Sze, Simon M.
Publicado 2017

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

por Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Publicado 2014

Physical and chemical mechanisms in oxide-based resistance random access memory

por Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng, Jin-Cheng, Sze, Simon M
Publicado 2015

Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer

por Chang, Kuan-Chang, Huang, Jen-wei, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Young, Tai-Fa, Chen, Jung-Hui, Zhang, Rui, Lou, Jen-Chung, Huang, Syuan-Yong, Pan, Yin-Chih, Huang, Hui-Chun, Syu, Yong-En, Gan, Der-Shin, Bao, Ding-Hua, Sze, Simon M
Publicado 2013

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

por Zhang, Rui, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Lou, Jen-Chung, Chen, Jung-Hui, Young, Tai-Fa, Shih, Chih-Cheng, Yang, Ya-Liang, Pan, Yin-Chih, Chu, Tian-Jian, Huang, Syuan-Yong, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Sze, Simon M
Publicado 2013