A 120-ke(−) Full-Well Capacity 160-µV/e(−) Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor †

por Takayanagi, Isao, Miyauchi, Ken, Okura, Shunsuke, Mori, Kazuya, Nakamura, Junichi, Sugawa, Shigetoshi
Publicado 2019

An Area-Efficient up/down Double-Sampling Circuit for a LOFIC CMOS Image Sensor

por Otani, Ai, Ogawa, Hiroaki, Miyauchi, Ken, Han, Sangman, Owada, Hideki, Takayanagi, Isao, Okura, Shunsuke
Publicado 2023

Area-Efficient Post-Processing Circuits for Physically Unclonable Function with 2-Mpixel CMOS Image Sensor

por Okura, Shunsuke, Aoki, Masanori, Oyama, Tatsuya, Shirahata, Masayoshi, Fujino, Takeshi, Ishikawa, Kenichiro, Takayanagi, Isao
Publicado 2021

A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel †

por Miyauchi, Ken, Mori, Kazuya, Otaka, Toshinori, Isozaki, Toshiyuki, Yasuda, Naoto, Tsai, Alex, Sawai, Yusuke, Owada, Hideki, Takayanagi, Isao, Nakamura, Junichi
Publicado 2020

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process †

por Takayanagi, Isao, Yoshimura, Norio, Mori, Kazuya, Matsuo, Shinichiro, Tanaka, Shunsuke, Abe, Hirofumi, Yasuda, Naoto, Ishikawa, Kenichiro, Okura, Shunsuke, Ohsawa, Shinji, Otaka, Toshinori
Publicado 2018