III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures

por Sun, Wei, Tan, Chee-Keong, Tansu, Nelson
Publicado 2017

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics

por Sun, Wei, Tan, Chee-Keong, Tansu, Nelson
Publicado 2017

Investigations of the Optical Properties of GaNAs Alloys by First-Principle

por Borovac, Damir, Tan, Chee-Keong, Tansu, Nelson
Publicado 2017

First-Principle Study of the Optical Properties of Dilute-P GaN(1−x)P(x) Alloys

por Borovac, Damir, Tan, Chee-Keong, Tansu, Nelson
Publicado 2018

InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters

por Tan, Chee-Keong, Borovac, Damir, Sun, Wei, Tansu, Nelson
Publicado 2016

Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter

por Tan, Chee-Keong, Borovac, Damir, Sun, Wei, Tansu, Nelson
Publicado 2016

Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters

por Tan, Chee-Keong, Sun, Wei, Borovac, Damir, Tansu, Nelson
Publicado 2016

First-Principle Electronic Properties of Dilute-P GaN(1−x)P(x) Alloy for Visible Light Emitters

por Tan, Chee-Keong, Borovac, Damir, Sun, Wei, Tansu, Nelson
Publicado 2016

Ultra-Broadband Optical Gain in III-Nitride Digital Alloys

por Sun, Wei, Tan, Chee-Keong, Wierer, Jonathan J., Tansu, Nelson
Publicado 2018

Band Anti-Crossing Model in Dilute-As GaNAs Alloys

por Goodrich, Justin C., Borovac, Damir, Tan, Chee-Keong, Tansu, Nelson
Publicado 2019

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes

por Fragkos, Ioannis E., Tan, Chee-Keong, Dierolf, Volkmar, Fujiwara, Yasufumi, Tansu, Nelson
Publicado 2017