Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption

por Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R.
Publicado 2021

Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption

por Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R.
Publicado 2022

Comparison between Bosch and STiGer Processes for Deep Silicon Etching

por Tillocher, Thomas, Nos, Jack, Antoun, Gaëlle, Lefaucheux, Philippe, Boufnichel, Mohamed, Dussart, Rémi
Publicado 2021

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

por Chanson, R., Zhang, L., Naumov, S., Mankelevich, Yu. A., Tillocher, T., Lefaucheux, P., Dussart, R., Gendt, S. De, Marneffe, J.-F. de
Publicado 2018