Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature

por Nguyen, Hieu T., Li, Zhuofeng, Han, Young-Joon, Basnet, Rabin, Tebyetekerwa, Mike, Truong, Thien N., Wu, Huiting, Yan, Di, Macdonald, Daniel
Publicado 2019