Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface

por Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn
Publicado 2012

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrO(x )nano-dots

por Banerjee, Writam, Maikap, Siddheswar, Lai, Chao-Sung, Chen, Yi-Yan, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn, Yang, Jer-Ren
Publicado 2012

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge(0.5)Se(0.5) solid electrolyte

por Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Das, Atanu, Prakash, Amit, Wu, Ya Hsuan, Lai, Chao-Sung, Tien, Ta-Chang, Chen, Wei-Su, Lee, Heng-Yuan, Chen, Frederick T, Tsai, Ming-Jinn, Chang, Liann-Be
Publicado 2012