Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

por Liu, An-Chen, Tu, Po-Tsung, Chen, Hsin-Chu, Lai, Yung-Yu, Yeh, Po-Chun, Kuo, Hao-Chung
Publicado 2023

The Evolution of Manufacturing Technology for GaN Electronic Devices

por Liu, An-Chen, Tu, Po-Tsung, Langpoklakpam, Catherine, Huang, Yu-Wen, Chang, Ya-Ting, Tzou, An-Jye, Hsu, Lung-Hsing, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Publicado 2021

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

por Hsu, Lung-Hsing, Lai, Yung-Yu, Tu, Po-Tsung, Langpoklakpam, Catherine, Chang, Ya-Ting, Huang, Yu-Wen, Lee, Wen-Chung, Tzou, An-Jye, Cheng, Yuh-Jen, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Publicado 2021