AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al(x)Ga(2–x)O(3) Sidewalls

por Wang, Tien-Yu, Lai, Wei-Chih, Sie, Syuan-Yu, Chang, Sheng-Po, Kuo, Cheng-Huang, Sheu, Jinn-Kong, Bow, Jong-Shing
Publicado 2022

The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

por Wang, Tien-Yu, Lai, Wei-Chih, Xie, Qiao-Ju, Yang, Shun-Hao, Chang, Sheng-Po, Kuo, Cheng-Huang, Sheu, Jinn-Kong
Publicado 2023