Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga(2)O(3), and Diamond

por Wellmann, Peter J.
Publicado 2017

The search for new materials and the role of novel processing routes

por Wellmann, Peter J.
Publicado 2021

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

por Steiner, Johannes, Wellmann, Peter J.
Publicado 2022

Analysis of Compositional Gradients in Cu(In,Ga)(S,Se)(2) Solar Cell Absorbers Using Energy Dispersive X-ray Analysis with Different Acceleration Energies

por Künecke, Ulrike, Schuster, Matthias, Wellmann, Peter
Publicado 2021

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

por Schöler, Michael, Brecht, Clemens, Wellmann, Peter J.
Publicado 2019

Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal

por Salamon, Michael, Arzig, Matthias, Wellmann, Peter J., Uhlmann, Norman
Publicado 2019

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

por Arzig, Matthias, Steiner, Johannes, Salamon, Michael, Uhlmann, Norman, Wellmann, Peter J.
Publicado 2019

Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules

por Ellefsen, Oda Marie, Arzig, Matthias, Steiner, Johannes, Wellmann, Peter, Runde, Pål
Publicado 2019

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

por Schuh, Philipp, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J.
Publicado 2019

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

por Steiner, Johannes, Roder, Melissa, Nguyen, Binh Duong, Sandfeld, Stefan, Danilewsky, Andreas, Wellmann, Peter J.
Publicado 2019

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

por Schuh, Philipp, Steiner, Johannes, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J.
Publicado 2019

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

por Roder, Melissa, Steiner, Johannes, Wellmann, Peter, Kabukcuoglu, Merve, Hamann, Elias, Haaga, Simon, Hänschke, Daniel, Danilewsky, Andreas
Publicado 2023

Novel Photonic Applications of Silicon Carbide

por Ou, Haiyan, Shi, Xiaodong, Lu, Yaoqin, Kollmuss, Manuel, Steiner, Johannes, Tabouret, Vincent, Syväjärvi, Mikael, Wellmann, Peter, Chaussende, Didier
Publicado 2023

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

por Via, Francesco La, Zimbone, Massimo, Bongiorno, Corrado, La Magna, Antonino, Fisicaro, Giuseppe, Deretzis, Ioannis, Scuderi, Viviana, Calabretta, Cristiano, Giannazzo, Filippo, Zielinski, Marcin, Anzalone, Ruggero, Mauceri, Marco, Crippa, Danilo, Scalise, Emilio, Marzegalli, Anna, Sarikov, Andrey, Miglio, Leo, Jokubavicius, Valdas, Syväjärvi, Mikael, Yakimova, Rositsa, Schuh, Philipp, Schöler, Michael, Kollmuss, Manuel, Wellmann, Peter
Publicado 2021