Surface-enhanced Raman scattering used to study the structure of layers formed on metal surfaces from single-stranded DNA and 6-mercaptohexan-1-ol: influence of hybridization with...

por Michałowska, Aleksandra, Gajda, Aleksandra, Kowalczyk, Agata, Weyher, Jan L., Nowicka, Anna M., Kudelski, Andrzej
Publicado 2022

Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed

por Sochacki, Tomasz, Kucharski, Robert, Grabianska, Karolina, Weyher, Jan L., Iwinska, Malgorzata, Bockowski, Michal, Kirste, Lutz
Publicado 2022

Role of dislocations in nitride laser diodes with different indium content

por Bojarska-Cieślińska, Agata, Marona, Łucja, Smalc-Koziorowska, Julita, Grzanka, Szymon, Weyher, Jan, Schiavon, Dario, Perlin, Piotr
Publicado 2021

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

por Zając, Magdalena A, Budner, Bogusław, Liszewska, Malwina, Bartosewicz, Bartosz, Gutowski, Łukasz, Weyher, Jan L, Jankiewicz, Bartłomiej J
Publicado 2023

Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

por Sochacki, Tomasz, Kucharski, Robert, Grabianska, Karolina, Weyher, Jan L., Zajac, Magdalena A., Iwinska, Malgorzata, Kirste, Lutz, Bockowski, Michal
Publicado 2023

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

por Kirste, Lutz, Tran Thi Caliste, Thu Nhi, Weyher, Jan L., Smalc-Koziorowska, Julita, Zajac, Magdalena A., Kucharski, Robert, Sochacki, Tomasz, Grabianska, Karolina, Iwinska, Malgorzata, Detlefs, Carsten, Danilewsky, Andreas N., Bockowski, Michal, Baruchel, José
Publicado 2022

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

por Tsykaniuk, Bogdan I., Nikolenko, Andrii S., Strelchuk, Viktor V., Naseka, Viktor M., Mazur, Yuriy I., Ware, Morgan E., DeCuir, Eric A., Sadovyi, Bogdan, Weyher, Jan L., Jakiela, Rafal, Salamo, Gregory J., Belyaev, Alexander E.
Publicado 2017

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

por Tsykaniuk, Bogdan I., Nikolenko, Andrii S., Strelchuk, Viktor V., Naseka, Viktor M., Mazur, Yuriy I., Ware, Morgan E., DeCuir, Eric A., Sadovyi, Bogdan, Weyher, Jan L., Jakiela, Rafal, Salamo, Gregory J., Belyaev, Alexander E.
Publicado 2017