Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors

por Wiśniowski, Piotr, Nawrocki, Maciej, Wrona, Jerzy, Cardoso, Susana, Freitas, Paulo. P.
Publicado 2021

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

por Dąbek, Michał, Wiśniowski, Piotr, Stobiecki, Tomasz, Wrona, Jerzy, Cardoso, Susana, Freitas, Paulo P.
Publicado 2016

Dependence of Sensitivity, Derivative of Transfer Curve and Current on Bias Voltage Magnitude and Polarity in Tunneling Magnetoresistance Sensors

por Fuśnik, Łukasz, Szafraniak, Bartłomiej, Wrona, Jerzy, Cardoso, Susana, Freitas, Paulo. P., Wiśniowski, Piotr
Publicado 2023

Understanding stability diagram of perpendicular magnetic tunnel junctions

por Skowroński, Witold, Czapkiewicz, Maciej, Ziętek, Sławomir, Chęciński, Jakub, Frankowski, Marek, Rzeszut, Piotr, Wrona, Jerzy
Publicado 2017

Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures

por Cecot, Monika, Karwacki, Łukasz, Skowroński, Witold, Kanak, Jarosław, Wrona, Jerzy, Żywczak, Antoni, Yao, Lide, van Dijken, Sebastiaan, Barnaś, Józef, Stobiecki, Tomasz
Publicado 2017

Publisher Correction: Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures

por Cecot, Monika, Karwacki, Łukasz, Skowroński, Witold, Kanak, Jarosław, Wrona, Jerzy, Żywczak, Antoni, Yao, Lide, van Dijken, Sebastiaan, Barnaś, Józef, Stobiecki, Tomasz
Publicado 2018

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

por Wang, Mengxing, Cai, Wenlong, Cao, Kaihua, Zhou, Jiaqi, Wrona, Jerzy, Peng, Shouzhong, Yang, Huaiwen, Wei, Jiaqi, Kang, Wang, Zhang, Youguang, Langer, Jürgen, Ocker, Berthold, Fert, Albert, Zhao, Weisheng
Publicado 2018